RA08N1317M - RoHS Compliance

Product Overview

Mitsubishi Electric

Part number	RA08N1317M
Manufacturer	Mitsubishi Electric
File Size	152.13 KB
Description	RoHS Compliance
Datasheet	RA08N1317M Datasheet
Additional preview pages of the RA08N1317M datasheet.

The RA08N1317M is a 8-watt RF MOSFET Amplifier Module for 9.6-volt portable radios that operate in the 135- to 175-MHz range.

Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=9.6V, VGG=0V).
Pout>8W @ VDD=9.6V, VGG=3.5V, Pin=20mW.
ηT>50% @ Pout=8W (VGG control), VDD=9.6V, Pin=20mW.
Broadband Frequency Range: 135-175MHz www. DataSheet4U. com.
Low-Power Control Current IGG=1mA (typ) at VGG=3.5V.
Module Size: 30 x 10 x 5.4 mm.
Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input.

📁 Similar Datasheet

RA08H1317M - Silicon RF Power Modules (Mitsubishi Electric Semiconductor)
RA0086 - 80-CH Segment/Common Driver (RAiO)
RA03M8087M - SILICON MOS FET POWER AMPLIFIER (Mitsubishi Electric Semiconductor)
RA0512J - Full Frame CCD Imager (EG&G Reticon)
RA07H0608M - MITSUBISHI RF MOSFET MODULE (Mitsubishi Electric Semiconductor)
RA07H4047M - 400-470MHz 7W 12.5V/ 2 Stage Amp. For PORTABLE/ MOBILE RADIO (Mitsubishi Electric Semiconductor)
RA07H4047M-01 - 400-470MHz 7W 12.5V/ 2 Stage Amp. For PORTABLE/ MOBILE RADIO (Mitsubishi Electric Semiconductor)
RA07H4047M-E01 - 400-470MHz 7W 12.5V/ 2 Stage Amp. For PORTABLE/ MOBILE RADIO (Mitsubishi Electric Semiconductor)

Other Datasheets by Mitsubishi Electric

Published: Jul 11, 2007 |