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RA08N1317M - RoHS Compliance

Datasheet Summary

Description

The RA08N1317M is a 8-watt RF MOSFET Amplifier Module for 9.6-volt portable radios that operate in the 135- to 175-MHz range.

The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors.

Features

  • Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=9.6V, VGG=0V).
  • Pout>8W @ VDD=9.6V, VGG=3.5V, Pin=20mW.
  • ηT>50% @ Pout=8W (VGG control), VDD=9.6V, Pin=20mW.
  • Broadband Frequency Range: 135-175MHz www. DataSheet4U. com.
  • Low-Power Control Current IGG=1mA (typ) at VGG=3.5V.
  • Module Size: 30 x 10 x 5.4 mm.
  • Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input.

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Datasheet Details

Part number RA08N1317M
Manufacturer Mitsubishi Electric
File Size 152.13 KB
Description RoHS Compliance
Datasheet download datasheet RA08N1317M Datasheet
Additional preview pages of the RA08N1317M datasheet.

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Full PDF Text Transcription

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MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA08N1317M BLOCK DIAGRAM 2 3 RoHS Compliance , 135-175MHz 8W 9.6V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA08N1317M is a 8-watt RF MOSFET Amplifier Module for 9.6-volt portable radios that operate in the 135- to 175-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 2.5V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 3V (typical) and 3.
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