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RA08N1317M - RoHS Compliance

General Description

The RA08N1317M is a 8-watt RF MOSFET Amplifier Module for 9.6-volt portable radios that operate in the 135- to 175-MHz range.

The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors.

Key Features

  • Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=9.6V, VGG=0V).
  • Pout>8W @ VDD=9.6V, VGG=3.5V, Pin=20mW.
  • ηT>50% @ Pout=8W (VGG control), VDD=9.6V, Pin=20mW.
  • Broadband Frequency Range: 135-175MHz www. DataSheet4U. com.
  • Low-Power Control Current IGG=1mA (typ) at VGG=3.5V.
  • Module Size: 30 x 10 x 5.4 mm.
  • Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input.

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Full PDF Text Transcription for RA08N1317M (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for RA08N1317M. For precise diagrams, and layout, please refer to the original PDF.

MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA08N1317M BLOCK DIAGRAM 2 3 RoHS Compliance , 135-175MHz 8W 9.6V, 2 Stage Amp. Fo...

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LOCK DIAGRAM 2 3 RoHS Compliance , 135-175MHz 8W 9.6V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA08N1317M is a 8-watt RF MOSFET Amplifier Module for 9.6-volt portable radios that operate in the 135- to 175-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 2.5V (minimum), output power and drain current increases substantially. The

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