RA30H3340M Datasheet | Mitsubishi Electric

DESCRIPTION The RA30H3340M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 330- to 400-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 d B. The output power and drain current increase as the gate voltage increases. With a gate voltage around 4V (minimum), output power and drain current increases substantially. The nominal output power bees available at 4.5V (typical) and 5V (maximum). At VGG=5V, the typical gate current is 1 m A. This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power. FEATURES - Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=12.5V, VGG=0V) - Pout>30W, ηT>40% @ VDD=12.5V, VGG=5V, Pin=50m W - Broadband Frequency Range: 330-400MHz - Low-Power Control Current IGG=1m A (typ) at VGG=5V .. - 66 x 21 x 9.8 mm - Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power 4 5 1 2 3 4 5 RF Input (Pin) Gate Voltage (VGG), Power Control Drain Voltage (VDD), Battery RF Output (Pout) RF Ground (Case) ORDERING INFORMATION: ORDER NUMBER RA30H3340M-E01 RA30H3340M-01 (Japan - packed without desiccator) SUPPLY FORM Antistatic tray, 10 modules/tray MITSUBISHI ELECTRIC 1/9 2 Dec 2002 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS MITSUBISHI RF POWER MODULE MAXIMUM RATINGS (Tcase=+25°C, unless otherwise specified) SYMBOL PARAMETER VDD VGG Pin Pout Tcase(OP) Tstg Drain Voltage Gate Voltage Input Power Output Power Operation Case Temperature Range Storage Temperature Range CONDITIONS VGG<5V VDD<12.5V, Pin=0m W f=330-400MHz, ZG=ZL=50Ω RATING 17 6 100 45 -30 to...