RA30H3340M - Silicon RF Power Modules

Product Overview

Mitsubishi Electric

Part number	RA30H3340M
Manufacturer	Mitsubishi Electric
File Size	198.70 KB
Description	Silicon RF Power Modules
Datasheet	RA30H3340M Datasheet
Additional preview pages of the RA30H3340M datasheet.

The RA30H3340M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 330- to 400-MHz range.

Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=12.5V, VGG=0V).
Pout>30W, ηT>40% @ VDD=12.5V, VGG=5V, Pin=50mW.
Broadband Frequency Range: 330-400MHz.
Low-Power Control Current IGG=1mA (typ) at VGG=5V www. DataSheet4U. com.
66 x 21 x 9.8 mm.
Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power 2 3 1 4 5 1 2 3 4 5 RF Input (Pin) Gate Voltage (VGG),.

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Published: Jul 12, 2007 |