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RA45H8994M1 Datasheet

Manufacturer: Mitsubishi Electric
RA45H8994M1 datasheet preview

Datasheet Details

Part number RA45H8994M1
Datasheet RA45H8994M1_MitsubishiElectric.pdf
File Size 204.68 KB
Manufacturer Mitsubishi Electric
Description RoHS Compliance
RA45H8994M1 page 2 RA45H8994M1 page 3

RA45H8994M1 Overview

The RA45H8994M1 is a 45-watt RF MOSFET Amplifier Module for 12.8-volt mobile radios that operate in the 896- to 941-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage 1 and the gate voltage 2(VGG1=VGG2=0V), only a small leakage current flows into the drain and the nominal output signal (Pout=45W) attenuates up to 60 dB.

RA45H8994M1 Key Features

  • Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=12.8V, VGG1=VGG2=0V)
  • Pout>45W, ηT>33% @VDD=12.8V, VGG1=3.4V, VGG2=5V, Pin=50mW
  • Broadband Frequency Range: 896-941MHz
  • Metal cap structure that makes the improvements of RF radiation simple
  • Low-Power Control Current IGG1+IGG2=0.4mA(typ) @ VGG1=3.4V, VGG2=5V
  • Module Size: 67 x 18 x 9.9 mm
  • Linear operation is possible by setting the quiescent drain current with the gate voltages and controlling the output po
  • RA45H8994M1 is a RoHS pliant product
  • RoHS pliance is indicate by the letter “G” after the Lot Marking
  • This product include the lead in the Glass of electronic parts and the lead in electronic Ceramic parts. How ever, it is
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