Datasheet4U Logo Datasheet4U.com

RA45H8994M1 - RoHS Compliance

General Description

The RA45H8994M1 is a 45-watt RF MOSFET Amplifier Module for 12.8-volt mobile radios that operate in the 896- to 941-MHz range.

The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors.

Key Features

  • Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=12.8V, VGG1=VGG2=0V) www. DataSheet4U. com 1 4 5 1 2 3 4 5 RF Input added Gate Voltage 1(Pin&VGG1) Gate Voltage 2(VGG2), Power Control Drain Voltage (VDD), Battery RF Output (Pout) RF Ground (Case).
  • Pout>45W, ηT>33% @VDD=12.8V, VGG1=3.4V, VGG2=5V, Pin=50mW.
  • Broadband Frequency Range: 896-941MHz.
  • Metal cap structure that makes the improvements of RF radiation simple.
  • Low-Power Control Current IGG1+I.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
RA45H4047M MITSUBISHI RF MOSFET MODULE 400-470MHz 45W 12.5V MOBILE RADIO Mitsubishi Electric Semiconductor
RA45H4047M-01 MITSUBISHI RF MOSFET MODULE 400-470MHz 45W 12.5V MOBILE RADIO Mitsubishi Electric Semiconductor
RA45H4047M-E01 MITSUBISHI RF MOSFET MODULE 400-470MHz 45W 12.5V MOBILE RADIO Mitsubishi Electric Semiconductor
RA4505K100-FA Radial PET Film Capacitors CDE
RA4104K250-FA Radial PET Film Capacitors CDE

Other Datasheets by Mitsubishi Electric

Part Number Description
RA45H4045MR 3 Stage Amp
RA45H4452M RoHS Compliance
RA45H7687M1 RoHS Compliance

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA45H8994M1 BLOCK DIAGRAM 2 3 RoHS Compliance, 896-941MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA45H8994M1 is a 45-watt RF MOSFET Amplifier Module for 12.8-volt mobile radios that operate in the 896- to 941-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage 1 and the gate voltage 2(VGG1=VGG2=0V), only a small leakage current flows into the drain and the nominal output signal (Pout=45W) attenuates up to 60 dB. When fixed i.e. 3.4V, is supplied to the gate voltage 1, the output power and the drain current increase as the gate voltage 2 increases.