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RA60H4452M1 Datasheet

Manufacturer: Mitsubishi Electric
RA60H4452M1 datasheet preview

Datasheet Details

Part number RA60H4452M1
Datasheet RA60H4452M1_MitsubishiElectric.pdf
File Size 229.50 KB
Manufacturer Mitsubishi Electric
Description Silicon RF Power Modules
RA60H4452M1 page 2 RA60H4452M1 page 3

RA60H4452M1 Overview

The RA60H4452M1 is a 60-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 440- to 520-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the nominal output signal (Pout=60W) attenuates up to 60 dB.

RA60H4452M1 Key Features

  • Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=12.5V, VGG=0V)
  • Pout>60W, ηT>40% @ VDD=12.5V, VGG=5V, Pin=50mW
  • Broadband Frequency Range: 440-520MHz
  • Metal shield structure that makes the improvements of spurious .. radiation simple
  • Low-Power Control Current IGG=5mA (typ) @ VGG=5V
  • Module Size: 67 x 18 x 9.9 mm
  • Linear operation is possible by setting the quiescent drain current with the gate voltages and controlling the output po
  • RA60H4452M1 is a RoHS pliant product
  • RoHS pliance is indicate by the letter “G” after the Lot Marking
  • This product include the lead in the Glass of electronic parts and the lead in electronic Ceramic parts. However, it is
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