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RA60H4452M1

RA60H4452M1 is Silicon RF Power Modules manufactured by Mitsubishi Electric.
RA60H4452M1 datasheet preview

RA60H4452M1 Datasheet

Part number RA60H4452M1
Download RA60H4452M1 Datasheet (PDF)
File Size 229.50 KB
Manufacturer Mitsubishi Electric
Description Silicon RF Power Modules
RA60H4452M1 page 2 RA60H4452M1 page 3

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RA60H4452M1 Description

The RA60H4452M1 is a 60-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 440- to 520-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the nominal output signal (Pout=60W) attenuates up to 60 dB.

RA60H4452M1 Key Features

  • Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=12.5V, VGG=0V)
  • Pout>60W, ηT>40% @ VDD=12.5V, VGG=5V, Pin=50mW
  • Broadband Frequency Range: 440-520MHz
  • Metal shield structure that makes the improvements of spurious .. radiation simple
  • Low-Power Control Current IGG=5mA (typ) @ VGG=5V
  • Module Size: 67 x 18 x 9.9 mm
  • Linear operation is possible by setting the quiescent drain current with the gate voltages and controlling the output po
  • RA60H4452M1 is a RoHS pliant product
  • RoHS pliance is indicate by the letter “G” after the Lot Marking
  • This product include the lead in the Glass of electronic parts and the lead in electronic Ceramic parts. However, it is

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