RD01MUS2 Description
Silicon MOSFET Power Transistor 520MHz,1W OUTLINE DRAWING 1.5+/-0.1 RD01MUS2 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications. This device have an interal monolithic zener diode from gate to source for ESD protection. TYPE NAME 0.8 MIN 2.5+/-0.1.
RD01MUS2 Key Features
- High power gain: Pout>0.8W, Gp>14dB @Vdd=7.2V,f=520MHz -High Efficiency: 65%typ. -Integrated gate protection diode
RD01MUS2 Applications
- High power gain: Pout>0.8W, Gp>14dB @Vdd=7.2V,f=520MHz -High Efficiency: 65%typ. -Integrated gate protection diode