RD12MVP1 - Silicon MOSFET Power Transistor

Product Overview

Mitsubishi Electric

Part number	RD12MVP1
Manufacturer	Mitsubishi Electric
File Size	150.12 KB
Description	Silicon MOSFET Power Transistor
Datasheet	RD12MVP1 Datasheet
Additional preview pages of the RD12MVP1 datasheet.

RD12MVP1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.

High Power Gain Pout>10W, Gp>13dB@Vdd=7.2V,f=175MHz.
High Efficiency: 55%min. (175MHz).
No gate protection diode INDEX MARK [Gate] (3.6) (4.5) 0.95+/-0.2 2.6+/-0.2 TOP VIEW DETAIL A SIDE VIEW 1.8+/-0.1 BOTTOM VIEW Terminal No. (a)Drain [output] (b)Source [GND] (c)Gate [input] (d)Source For output stage of high power amplifiers in VHF band mobile radio sets. SIDE VIEW Standoff = max 0.05.

📁 Similar Datasheet

Other Datasheets by Mitsubishi Electric

Published: Feb 15, 2007 |