RD12MVP1
RD12MVP1 is Silicon MOSFET Power Transistor manufactured by Mitsubishi Electric.
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MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
(a) 0.2+/-0.05 0.65+/-0.2 (c) (b) (b) 7.0+/-0.2 8.0+/-0.2 6.2+/-0.2 5.6+/-0.2 (d) 4.2+/-0.2
RoHS pliance, Silicon MOSFET Power Transistor, 175MHz, 10W DESCRIPTION
RD12MVP1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications. OUTLINE DRAWING
Features
- High Power Gain Pout>10W, Gp>13dB@Vdd=7.2V,f=175MHz
- High Efficiency: 55%min. (175MHz)
- No gate protection diode
INDEX MARK [Gate]
(3.6)
(4.5)
0.95+/-0.2
2.6+/-0.2
TOP VIEW
DETAIL A
SIDE VIEW
1.8+/-0.1
BOTTOM VIEW
Terminal No. (a)Drain [output] (b)Source [GND] (c)Gate [input]...
