RD12MVP1
Overview
- High Power Gain Pout>10W, Gp>13dB@Vdd=7.2V,f=175MHz
- High Efficiency: 55%min. (175MHz)
- No gate protection diode
| Part | RD12MVP1 |
|---|---|
| Description | Silicon MOSFET Power Transistor |
| Category | MOSFET |
| Manufacturer | Mitsubishi Electric |
| Size | 150.12 KB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| RD12M | NEC | ZENER DIODES 200 mW 3-PIN MINI MOLD |
| RD12MW | NEC | ZENER DIODES 200 mW 3-PIN MINI MOLD |
| RD12E | EIC Semiconductor | SILICON ZENER DIODES |
| RD12ES | WEJ | Zener diode |
| RD120E | Renesas | 500mW PLANAR TYPE SILICON ZENER DIODES |