Description
RD12MVP1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.
Features
- High Power Gain Pout>10W, Gp>13dB@Vdd=7.2V,f=175MHz.
- High Efficiency: 55%min. (175MHz).
- No gate protection diode
INDEX MARK [Gate]
(3.6)
(4.5)
0.95+/-0.2
2.6+/-0.2
TOP VIEW
DETAIL A
SIDE VIEW
1.8+/-0.1
BOTTOM VIEW
Terminal No. (a)Drain [output] (b)Source [GND] (c)Gate [input] (d)Source
For output stage of high power amplifiers in VHF band mobile radio sets. SIDE VIEW
Standoff = max 0.05.
RD12MVP1 Datasheet
