RD12MVS1
RD12MVS1 is Silicon RF Power MOS FET manufactured by Mitsubishi Electric.
< Silicon RF Power MOS FET (Discrete) >
RoHS pliant, Silicon MOSFET Power Transistor, 175MHz, 12W
DESCRIPTION
RD12MVS1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.
OUTLINE DRAWING
Features
High Power Gain: Pout>11.5W, Gp>12dB@Vdd=7.2V,f=175MHz
High Efficiency: 57%typ. (175MHz)
APPLICATION
For output stage of high power amplifiers in VHF band mobile radio sets.
RoHS PLIANT
RD12MVS1 is EU RoHS pliant product. RoHS pliant product is indicating by the letter “ZG” after the Lot...
