RD16HHF1
RD16HHF1 is Silicon MOSFET Power Transistor manufactured by Mitsubishi Electric.
< Silicon RF Power MOS FET (Discrete) >
RoHS pliance, Silicon MOSFET Power Transistor 30MHz,16W
DESCRIPTION
RD16HHF1 is a MOS FET type transistor specifically designed for HF RF power amplifiers applications.
Features
High power gain: Pout>16W, Gp>16dB @Vds=12.5V,f=30MHz Integrated gate protection diode
12.3+/-0.6 3.2+/-0.4
4.8MAX 9+/-0.4
OUTLINE DRAWING
9.1+/-0.7
3.6+/-0.2
1.2+/-0.4 0.8+0.10/-0.15
1.3+/-0.4
12.3MIN
APPLICATION
For output stage of high power amplifiers in HF band mobile radio sets.
2.5 2.5
5deg
0.5+0.10/-0.15
3.1+/-0.6 4.5 +/- 0.5
RoHS PLIANT
RD16HHF1-501 is a RoHS pliant product.
PINS
1: GAT E
9.5MAX
2:SOURCE note: 3:DRAIN
Torelance...
