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RD16HHF1 Datasheet Silicon MOSFET Power Transistor

Manufacturer: Mitsubishi Electric

Overview: < Silicon RF Power MOS FET (Discrete) > RD16HHF1 RoHS Compliance, Silicon MOSFET Power Transistor.

General Description

RD16HHF1 is a MOS FET type transistor specifically designed for HF RF power amplifiers applications.

Key Features

  • High power gain: Pout>16W, Gp>16dB @Vds=12.5V,f=30MHz Integrated gate protection diode 12.3+/-0.6 3.2+/-0.4 4.8MAX 9+/-0.4.

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