RD45HMF1 Datasheet | Mitsubishi Electric

DESCRIPTION RD45HMF1 is a MOS FET type transistor specifically designed for 900MHz-band High power amplifiers applications. OUTLINE DRAWING 4-C2 24.0+/-0.6 - High power and High Gain: Pout>45W, Gp>4.7d B @Vdd=12.5V,f=900MHz - High Efficiency: 50%typ. 10.0+/-0.3 FEATURES 9.6+/-0.3 0.1 -0.01 +0.05 R1.6+/-0.15 4.5+/-0.7 6.2+/-0.7 APPLICATION For output stage of high power amplifiers in 800-900MHz Band mobile radio sets. 5.0+/-0.3 18.5+/-0.3 PIN 1.DRAIN 2.SOURCE 3.GATE UNIT:mm ABSOLUTE MAXIMUM RATINGS (Tc=25°C UNLESS OTHERWISE NOTED) .. SYMBOL VDSS VGSS Pch Pin ID Tch Tstg Rth j-c PARAMETER Drain to source voltage Gate to source voltage Channel dissipation Input power Drain current Channel temperature Storage temperature Thermal resistance CONDITIONS Vgs=0V Vds=0V Tc=25°C Zg=Zl=50Ω junction to case RATINGS 30 +/-20 125 25 15 175 -40 to +175 1.2 UNIT V V W W A °C °C °C/W Note 1: Above parameters are guaranteed independently. ELECTRICAL CHARACTERISTICS (Tc=25°C UNLESS OTHERWISE NOTED) SYMBOL IDSS IGSS VTH Pout ηD PARAMETER Zerogate voltage drain current Gate to source leak current Gate threshold voltage Output power Drain efficiency Load VSWR tolerance CONDITIONS VDS=17V, VGS=0V VGS=10V, VDS=0V VDS=12V, IDS=1m A f=900MHz ,VDD=12.5V Pin=15W,Idq=2.0A VDD=15.2V,Po=45W(Pin Control) Idq=2.0A,Zg=50Ω Load VSWR=20:1(All Phase) MIN 1.0 45 45 LIMITS TYP MAX. 10 1 3.0 50 50 No destroy UNIT u A u A V W % - Note : Above parameters , ratings , limits and conditions are subject to change. 3.3+/-0.2 MITSUBISHI ELECTRIC 1/7 REV.2 7 Apr. 2003 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Vgs-Ids CHARACTERISTICS 10 8 6 4 2 0 Ta=+25°C Vds=10V Silicon MOSFET Power Transistor 900MHz,45W TYPICAL CHARACTERISTICS 160 CHANNEL DISSIPATION Pch(W) DRAIN DISSIPATION VS. AMBIENT...