RD45HMF1 Overview
RD45HMF1 is a MOS FET type transistor specifically designed for 900MHz-band High power amplifiers applications. OUTLINE DRAWING 4-C2 24.0+/-0.6 High power and High Gain: Pout>45W, Gp>4.7dB @Vdd=12.5V,f=900MHz High Efficiency:.
RD45HMF1 datasheet by Mitsubishi Electric.
| Part number | RD45HMF1 |
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| Datasheet | RD45HMF1_MitsubishiElectric.pdf |
| File Size | 348.04 KB |
| Manufacturer | Mitsubishi Electric |
| Description | Silicon MOSFET Power Transistor |
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RD45HMF1 is a MOS FET type transistor specifically designed for 900MHz-band High power amplifiers applications. OUTLINE DRAWING 4-C2 24.0+/-0.6 High power and High Gain: Pout>45W, Gp>4.7dB @Vdd=12.5V,f=900MHz High Efficiency:.
View all Mitsubishi Electric datasheets
| Part Number | Description |
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