Mitsubishi BCR16PM
Triac
MAXIMUM RATINGS
Symbol VDRM VDSM Parameter Repetitive peak off-state voltage V1 Non-repetitive peak off-state voltage V1 Voltage class 8 400 500 12 600 720 Unit V V Symbol IT (RMS) ITSM I2t PGM PG (AV) VGM IGM Tj Tstg — Viso Parameter RMS on-state current Surge on-state current I2t for fusing Conditions Commercial power frequency, sine full wave 360° conduction, Tc=71° C 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current 4.5 Ratings 16 160 107.5 5.0 0.5 10 2 –40 ~ +125 –40 ~ +125 Unit A A A2s W W V A °C °C g V Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Weight Isolation voltage Typical value Ta=25°C, AC 1 minute, T 1● T2
● G terminal to case 2.0 1500 V1. Gate open. Feb.1999 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR16PM MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE
ELECTRICAL CHARACTERISTICS
Symbol IDRM VTM VFGT ! VRGT !