CM1200HCB-34N Description
<High Voltage Insulated Gate Bipolar Transistor：HVIGBT > CM1200HCB-34N HIGH POWER SWITHCHING USE INSULATED TYPE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules CM2400HCB-34N IC ·························································· 1200 A VCES ···················································· 1700 V 1-element in pack Insulated type CSTBTTM / Soft recovery diode AlSiC baseplate...