CM200DY-13T Description
<IGBT Modules> CM200DY-13T HIGH POWER SWITCHING USE INSULATED TYPE dual switch (half-bridge) Collector current IC .............…..................… 2 0 0 A Collector-emitter voltage VCES .................. 6 5 0 V Maximum junction temperature T v j m a x ......... 1 7 5 °C dual switch (half-bridge) Copper base plate (Nickel-plating) Nickel-plating tab terminals RoHS Directive pliant UL Recognized under UL1557, File...