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MITSUBISHI HVIGBT MODULES
CM900HG-90H
HIGH POWER SWITCHING USE
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
INSULATED TYPE
CM900HG-90H
● IC .................................................................. 900 A ● VCES ...................................................... 4500 V ● High Insulated Type ● 1-element in a Pack ● AISiC Baseplate
APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
57±0.25
190±0.5 57±0.25
57±0.25
5-M8 NUTS
6
4
2
17±0.1
(6)
(4)
(2)
C
C
C
C
44±0.3 124±0.25 140±0.5
3-M4 NUTS
screwing depth min. 7.7
5 E G
3 C
14±0.3
59.2±0.5
61.2±0.5
61.2±0.5 12±0.3
G
1
E
9±0.1
8-φ7 MOUNTING HOLES
18±0.3 screwing depth min.
CM900HG-90H Datasheet
