Mitsubishi CT90AM-18
Insulated Gate Bipolar Transistor
| Part No. | CT90AM-18 |
|---|---|
| Datasheet | CT90AM-18 Download |
| Manufacturer |  Mitsubishi |
| Description | Insulated Gate Bipolar Transistor |
| Buy | Stock & Price |
MAXIMUM RATINGS
Symbol VCES VGES VGEM IC ICM IE PC Tj Tstg (Tc = 25°C) Parameter Collector-emitter voltage Gate-emitter voltage Peak gate-emitter voltage Collector current Collector current (Pulsed) Emitter current Maximum power dissipation Junction temperature Storage temperature VGE = 0V Conditions Ratings 900 ± 25 ± 30 60 120 40 250 –40 ~ +150 –40 ~ +150 Unit V V V A A A W °C °C Sep. 2000 ww.DataSheet4U.com 20.6MIN. w 2 2.5 w m o CT90AM-18 .c CT90AM-18 u 4 t e e h s a t a d . MITSUBISHI Nch IGBT MITSUBISHI Nch IGBT Dimensions in mm 5 2 φ3.2 6 1 26 MITSUBISHI Nch IGBT CT90AM-18 INSULATED GATE BIPOLAR TRANSISTORELECTRICAL CHARACTERISTICS
Symbol ICES IGES VGE (th) VCE (sat) Cies Coes Cres td (on) tr td (off) tf Etail Itail VEC trr Rth (ch-c) Rth (ch-c) Parameter (Tj = 25° C) Test conditions VCE = 900V, VGE = 0V VGE = ± 20V, VCE = 0V VCE = 10V, IC = 6mA IC = 60A, VGE = 15V VCE = 25V, VGE = 0V, f = 1MHz Limits Min. — — 2.0 — — — — — — — — — — — — — — Typ. — — 4.0 1.55 11000 180 125 0.05 0.10 0.20 0.30 0.6 6 — 0.5 — — Max.