Mitsubishi FK10SM-10
HIGH-SPEED SWITCHING USE
| Part No. | FK10SM-10 |
|---|---|
| Datasheet | FK10SM-10 Download |
| Manufacturer |  Mitsubishi |
| Description | HIGH-SPEED SWITCHING USE |
| Buy | Stock & Price |
MAXIMUM RATINGS
Symbol VDSS VGSS ID IDM IS ISM PD Tch Tstg — (Tc = 25°C) Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight Typical value VGS = 0V VDS = 0V Conditions Ratings 500 ±30 10 30 10 30 125 –55 ~ +150 –55 ~ +150 4.8 Unit V V A A A A W °C °C g Feb.1999 MITSUBISHI Nch POWER MOSFET FK10SM-10 HIGH-SPEED SWITCHING USEELECTRICAL CHARACTERISTICS
Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) trr Parameter (Tch = 25°C) Test conditions ID = 1mA, VGS = 0V IG = ±100µA, VDS = 0V VGS = ±25V, VDS = 0V VDS = 500V, VGS = 0V ID = 1mA, VDS = 10V ID = 5A, VGS = 10V ID = 5A, VGS = 10V ID = 5A, VDS = 10V VDS = 25V, VGS = 0V, f = 1MHz Limits Min. 500 ±30 — — 2 — — 3.3 — — — — — — — — — — Typ. — — — — 3 0.88 4.40 5.5 1100 130 20 20 30 95 35 1.5 — — Max. — — ±10 1 4 1.13 5.65...
