Mitsubishi FS100UM-03
Nch POWER MOSFET
| Part No. | FS100UM-03 |
|---|---|
| Datasheet | FS100UM-03 Download |
| Manufacturer |  Mitsubishi |
| Description | Nch POWER MOSFET |
| Buy | Stock & Price |
MAXIMUM RATINGS
Symbol VDSS VGSS ID IDM IDA IS ISM PD T ch T stg — (Tc = 25°C) Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight Typical value VGS = 0V VDS = 0V Conditions Ratings 30 ±20 100 400 100 100 400 125 –55 ~ +150 –55 ~ +150 2.0 4.5MAX. Unit V V A A A A A W °C °C g Feb.1999 L = 30µH MITSUBISHI Nch POWER MOSFET FS100UM-03 HIGH-SPEED SWITCHING USEELECTRICAL CHARACTERISTICS
Symbol V (BR) DSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) y fs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) trr Parameter Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage (Tch = 25° C) Test conditions ID = 1mA, VGS = 0V VGS = ± 20V, VDS = 0V VDS = 30V, VGS = 0V ID = 1mA, VDS = 10V ID = 50A, VGS = 10V ID = 50A, VGS = 10V ID = 50A, VDS = 10V VDS = 10V, VGS = 0V, f = 1MHz Limits Min.
