Mitsubishi FS10ASH-06
Nch POWER MOSFET
MAXIMUM RATINGS
Symbol VDSS VGSS ID IDM IDA IS ISM PD T ch T stg — (Tc = 25°C) Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight Typical value VGS = 0V VDS = 0V Conditions Ratings 60 ±10 10 40 10 10 40 30 –55 ~ +150 –55 ~ +150 0.26 Unit V V A A A A A W °C °C g Feb.1999 L = 100µH MITSUBISHI Nch POWER MOSFET FS10ASH-06 HIGH-SPEED SWITCHING USEELECTRICAL CHARACTERISTICS
Symbol V (BR) DSS IGSS IDSS VGS (th) rDS (ON) rDS (ON) VDS (ON) y fs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) trr Parameter (Tch = 25° C) Test conditions ID = 1mA, VGS = 0V VGS = ± 10V, VDS = 0V VDS = 60V, VGS = 0V ID = 1mA, VDS = 10V ID = 5A, VGS = 4V ID = 5A, VGS = 2.5V ID = 5A, VGS = 4V ID = 5A, VDS = 5V VDS = 10V, VGS = 0V, f = 1MHz Limits Min. 60 — — 0.6 — — — — — — — — — — — — — — Typ. — — — 0.9 54 64 0.27 18 1150 185 80 1...