FS10KM-06
FS10KM-06 is Nch POWER MOSFET manufactured by Mitsubishi Electric.
MITSUBISHI Nch POWER MOSFET
HIGH-SPEED SWITCHING USE
OUTLINE DRAWING
10 ± 0.3
6.5 ± 0.3 3 ± 0.3
Dimensions in mm
2.8 ± 0.2
15 ± 0.3 f 3.2 ± 0.2
14 ± 0.5
3.6 ± 0.3
1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15
0.75 ± 0.15
2.54 ± 0.25
2.54 ± 0.25
4.5 ± 0.2
1 2 3
2.6 ± 0.2
¡10V DRIVE ¡VDSS 60V ¡r DS (ON) (MAX) 78m Ω ¡ID 10A ¡Integrated Fast Recovery Diode (TYP.) 55ns ¡Viso 2000V w q q GATE w DRAIN e SOURCE e
TO-220FN
APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc.
MAXIMUM RATINGS
Symbol VDSS VGSS ID IDM IDA IS ISM PD T ch T stg Viso
- (Tc = 25°C)
Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Isolation voltage Weight L = 100µH VGS = 0V VDS = 0V
Conditions
Ratings 60 ±20 10 40 10 10 40 20
- 55 ~ +150
Unit V V A A A A A W °C °C V g
Feb.1999
AC for 1minute, Terminal to case Typical value
- 55 ~ +150 2000 2.0
MITSUBISHI Nch POWER MOSFET
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
Symbol V (BR) DSS IGSS IDSS VGS (th) r DS (ON) VDS (ON) y fs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) trr Parameter Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage
(Tch = 25° C)
Test conditions ID = 1m A, VGS = 0V VGS = ± 20V, VDS = 0V VDS = 60V, VGS = 0V ID = 1m A, VDS = 10V ID = 5A, VGS = 10V ID = 5A, VGS = 10V ID = 5A, VDS = 5V VDS = 10V, VGS = 0V, f = 1MHz
Limits Min. 60
- -...
