Mitsubishi FS10VS-10
Nch POWER MOSFET
| Part No. | FS10VS-10 |
|---|---|
| Datasheet | FS10VS-10 Download |
| Manufacturer |  Mitsubishi |
| Description | Nch POWER MOSFET |
| Buy | Stock & Price |
MAXIMUM RATINGS
Symbol VDSS VGSS ID IDM PD Tch Tstg — (Tc = 25°C) Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight VGS = 0V VDS = 0V Conditions Ratings 500 ±30 10 30 125 –55 ~ +150 –55 ~ +150 1.2 4.5 Unit V V A A W °C °C g Feb.1999 Typical value (1.5) MITSUBISHI Nch POWER MOSFET FS10VS-10 HIGH-SPEED SWITCHING USEELECTRICAL CHARACTERISTICS
Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) Parameter (Tch = 25°C) Test conditions ID = 1mA, VGS = 0V IG = ±100µA, VDS = 0V VGS = ±25V, VDS = 0V VDS = 500V, VGS = 0V ID = 1mA, VDS = 10V ID = 5A, VGS = 10V ID = 5A, VGS = 10V ID = 5A, VDS = 10V VDS = 25V, VGS = 0V, f = 1MHz Limits Min. 500 ±30 — — 2 — — 3.3 — — — — — — — — — Typ. — — — — 3 0.70 3.5 5.5 1100 135 20 20 30 95 35 1.5 — Max. — — ±10 1 4 0.90 4.5 — — — — — — — — 2.0 1.0 Unit V V µA mA V Ω V S pF pF pF...
