Mitsubishi FS14VS-9
Nch POWER MOSFET
MAXIMUM RATINGS
Symbol VDSS VGSS ID IDM PD Tch Tstg — (Tc = 25°C) Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight Typical value VGS = 0V VDS = 0V Conditions Ratings 450 ±30 14 42 150 –55 ~ +150 –55 ~ +150 1.2 4.5 Unit V V A A W °C °C g Feb.1999 (1.5) MITSUBISHI Nch POWER MOSFET FS14VS-9 HIGH-SPEED SWITCHING USEELECTRICAL CHARACTERISTICS
Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) Parameter (Tch = 25°C) Test conditions ID = 1mA, VGS = 0V IG = ±100µA, VDS = 0V VGS = ±25V, VDS = 0V VDS = 450V, VGS = 0V ID = 1mA, VDS = 10V ID = 7A, VGS = 10V ID = 7A, VGS = 10V ID = 7A, VDS = 10V VDS = 25V, VGS = 0V, f = 1MHz Limits Min. 450 ±30 — — 2 — — 4.5 — — — — — — — — — Typ. — — — — 3 0.40 2.8 7.0 1500 180 30 30 50 130 50 1.5 — Max. — — ±10 1 4 0.52 3.6 — — — — — — — — 2.0 0.83 Unit V V µA mA V Ω V S pF pF pF...