Mitsubishi FS16UM-6
Nch POWER MOSFET
MAXIMUM RATINGS
Symbol VDSS VGSS ID IDM PD Tch Tstg — (Tc = 25°C) Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight VGS = 0V VDS = 0V Conditions Ratings 300 ±30 16 48 125 –55 ~ +150 –55 ~ +150 2.0 Unit V V A A W °C °C g Feb.1999 Typical value MITSUBISHI Nch POWER MOSFET FS16UM-6 HIGH-SPEED SWITCHING USEELECTRICAL CHARACTERISTICS
Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) Parameter (Tch = 25°C) Test conditions ID = 1mA, VGS = 0V IG = ±100µA, VDS = 0V VGS = ±25V, VDS = 0V VDS = 300V, VGS = 0V ID = 1mA, VDS = 10V ID = 8A, VGS = 10V ID = 8A, VGS = 10V ID = 8A, VDS = 10V VDS = 25V, VGS = 0V, f = 1MHz Limits Min. 300 ±30 — — 2 — — 6.5 — — — — — — — — — Typ. — — — — 3 0.25 2.0 10.0 1050 220 45 20 40 110 50 1.5 — Max. — — ±10 1 4 0.33 2.64 — — — — — — — — 2.0 1.00 Unit V V µA mA V Ω V S pF pF pF ns ns n...