Mitsubishi FS30AS-2
N-Channel Power MOSFET
| Part No. | FS30AS-2 |
|---|---|
| Datasheet | FS30AS-2 Download |
| Manufacturer |  Mitsubishi |
| Description | N-Channel Power MOSFET |
| Buy | Stock & Price |
MAXIMUM RATINGS
Symbol VDSS VGSS ID IDM PD Tch Tstg Viso — (Tc = 25°C) Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Isolation voltage Weight VGS = 0V VDS = 0V Conditions Ratings 600 ±30 2 6 30 –55 ~ +150 –55 ~ +150 2000 2.0 Unit V V A A W °C °C Vrms g Feb.1999 AC for 1minute, Terminal to case Typical value MITSUBISHI Nch POWER MOSFET FS2KM-12 HIGH-SPEED SWITCHING USEELECTRICAL CHARACTERISTICS
Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) Parameter (Tch = 25°C) Test conditions ID = 1mA, VGS = 0V IG = ±100µA, VDS = 0V VGS = ±25V, VDS = 0V VDS = 600V, VGS = 0V ID = 1mA, VDS = 10V ID = 1A, VGS = 10V ID = 1A, VGS = 10V ID = 1A, VDS = 10V VDS = 25V, VGS = 0V, f = 1MHz Limits Min. 600 ±30 — — 2 — — 0.8 — — — — — — — — — Typ. — — — — 3 5.0 5.0 1.3 300 30 5 13 10 30 30 1.5 — Max. — — ±10 1 4 6.4 6.4 — — — — —...
