FY8ACH-02A Datasheet PDF

MAXIMUM RATINGS

Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg — (Tc = 25°C) Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight Typical value VGS = 0V VDS = 0V Conditions Ratings 20 ±10 8 56 8 1.7 6.8 1.8 –55 ~ +150 –55 ~ +150 0.07 Unit V V A A A A A W °C °C g Sep.1998 L = 10µH MITSUBISHI Nch POWER MOSFET FY8ACH-02A HIGH-SPEED SWITCHING USE

ELECTRICAL CHARACTERISTICS

Symbol V (BR) DSS IGSS IDSS VGS (th) rDS (ON) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-a) trr Parameter Drain-source breakdown voltage (Tch = 25°C) Test conditions ID = 1mA, VGS = 0V VGS = ±10V, VDS = 0V VDS = 20V, VGS = 0V ID = 1mA, VDS = 10V ID = 8A, VGS = 4V ID = 4A, VGS = 2.5V ID = 8A, VGS = 4V ID = 8A, VDS = 10V VDS = 10V, VGS = 0V, f = 1MHz Limits Min. 20 — — 0.5 — — — — — — — — — — — — — — Typ. — — — 0.9...