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M2S28D40ATP Datasheet

Manufacturer: Mitsubishi Electric

This datasheet includes multiple variants, all published together in a single manufacturer document.

M2S28D40ATP datasheet preview

Datasheet Details

Part number M2S28D40ATP
Datasheet M2S28D40ATP M2S Datasheet (PDF)
File Size 1.19 MB
Manufacturer Mitsubishi Electric
Description 128M Double Data Rate Synchronous DRAM
M2S28D40ATP page 2 M2S28D40ATP page 3

M2S28D40ATP Overview

All control and address signals are referenced to the rising edge of CLK. Input data is registered on both edges of data strobe, and output data and data strobe are referenced on both edges of CLK. The M2S28D20/30/40ATP achieves very high speed data rate up to 133MHz, and are suitable for main memory in puter systems.

M2S28D40ATP Key Features

  • Vdd=Vddq=2.5V+0.2V
  • Double data rate architecture; two data transfers per clock cycle
  • Bidirectional, data strobe (DQS) is transmitted/received with data
  • Differential clock inputs (CLK and /CLK)
  • DLL aligns DQ and DQS transitions with CLK transitions edges of DQS
  • mands entered on each positive CLK edge
  • data and data mask referenced to both edges of DQS
  • 4 bank operation controlled by BA0, BA1 (Bank Address)
  • /CAS latency- 2.0/2.5 (programmable)
  • Burst length- 2/4/8 (programmable)
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