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M2S56D20AKT Datasheet 256m Double Data Rate Synchronous Dram

Manufacturer: Mitsubishi Electric

Overview: DDR SDRAM (Rev.1.0) Jul. '01 Preliminary M2S56D20/ 30/ 40AKT MITSUBISHI LSIs 256M Double Data Rate Synchronous DRAM PRELIMINARY Some of contents are subject to change without notice.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

M2S56D20AKT is a 4-bank x 16,777,216-word x 4-bit, M2S56D30AKT is a 4-bank x 8,388,608-word x 8-bit, M2S56D40AKT is a 4-bank x 4,194,304-word x 16-bit, double data rate synchronous DRAM, with SSTL_2 interface.

All control and address signals are referenced to the rising edge of CLK.

Input data is registered on both edges of data strobe, and output data and data strobe are referenced on both edges of CLK.

Key Features

  • - Vdd=Vddq=2.5V+0.2V - Double data rate architecture; two data transfers per clock cycle - Bidirectional, data strobe (DQS) is transmitted/received with data - Differential clock inputs (CLK and /CLK) - DLL aligns DQ and DQS transitions with CLK transitions edges of DQS - Commands entered on each positive CLK edge; - data and data mask referenced to both edges of DQS - 4 bank operation controlled by BA0, BA1 (Bank Address) - /CAS latency- 2.0/2.5 (programmable) - Burst length- 2/4/8 (programmabl.

M2S56D20AKT Distributor

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