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M2S56D20ATP75A

Manufacturer: Mitsubishi Electric

M2S56D20ATP75A datasheet by Mitsubishi Electric.

This datasheet includes multiple variants, all published together in a single manufacturer document.

M2S56D20ATP75A datasheet preview

M2S56D20ATP75A Datasheet Details

Part number M2S56D20ATP75A
Datasheet M2S56D20ATP75A M2S Datasheet (PDF)
File Size 824.59 KB
Manufacturer Mitsubishi Electric
Description 256M Double Data Rate Synchronous DRAM
M2S56D20ATP75A page 2 M2S56D20ATP75A page 3

M2S56D20ATP75A Overview

All control and address signals are referenced to the rising edge of CLK. Input data is registered on both edges of data strobe, and output data and data strobe are referenced on both edges of CLK. The M2S56D20/30/40AKT achieves very high speed data rate up to 133MHz, and are suitable for main memory in puter systems.

M2S56D20ATP75A Key Features

  • Vdd=Vddq=2.5V+0.2V
  • Double data rate architecture; two data transfers per clock cycle
  • Bidirectional, data strobe (DQS) is transmitted/received with data
  • Differential clock inputs (CLK and /CLK)
  • DLL aligns DQ and DQS transitions with CLK transitions edges of DQS
  • mands entered on each positive CLK edge
  • data and data mask referenced to both edges of DQS
  • 4 bank operation controlled by BA0, BA1 (Bank Address)
  • /CAS latency- 2.0/2.5 (programmable)
  • Burst length- 2/4/8 (programmable)
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