M2V28D20ATP-10 - 128M Double Data Rate Synchronous DRAM

This page provides the datasheet information for the M2V28D20ATP-10, a member of the M2S 128M Double Data Rate Synchronous DRAM family.

Product Overview

Mitsubishi

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Datasheet Details

Part number	M2V28D20ATP-10
Manufacturer	Mitsubishi
File Size	1.19 MB
Description	128M Double Data Rate Synchronous DRAM
Datasheet	M2V28D20ATP-10 Datasheet
Additional preview pages of the M2V28D20ATP-10 datasheet.

M2V28D20ATP-10 Product details

Description

M2S28D20ATP is a 4-bank x 8388608-word x 4-bit, M2S28D30ATP is a 4-bank x 4194304-word x 8-bit, M2S28D40ATP is a 4-bank x 2097152-word x 16-bit, double data rate synchronous DRAM, with SSTL_2 interface.

All control and address signals are referenced to the rising edge of CLK.

Features

- Vdd=Vddq=2.5V+0.2V - Double data rate architecture; two data transfers per clock cycle - Bidirectional, data strobe (DQS) is transmitted/received with data - Differential clock inputs (CLK and /CLK) - DLL aligns DQ and DQS transitions with CLK transitions edges of DQS - Commands entered on each positive CLK edge; - data and data mask referenced to both edges of DQS - 4 bank operation controlled by BA0, BA1 (Bank Address) - /CAS latency- 2.0/2.5 (programmable) - Burst length- 2/4/8 (programmabl.

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Published: May 2, 2005 |