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M2V28S30ATP Datasheet

Manufacturer: Mitsubishi Electric
M2V28S30ATP datasheet preview

Datasheet Details

Part number M2V28S30ATP
Datasheet M2V28S30ATP_MitsubishiElectricSemiconductor.pdf
File Size 626.92 KB
Manufacturer Mitsubishi Electric
Description 128M Synchronous DRAM
M2V28S30ATP page 2 M2V28S30ATP page 3

M2V28S30ATP Overview

All inputs and outputs are referenced to the rising edge of CLK. M2V28S20ATP,M2V28S30ATP,M2V28S40ATP achieves very high speed data rates up to 133MHz, and is suitable for main memory or graphic memory in puter systems.

M2V28S30ATP Key Features

  • Single 3.3V ±0.3V power supply
  • Max. Clock frequency -6:PC133<3-3-3> / -7:PC100<2-2-2> / -8:PC100<3-2-2>
  • Fully synchronous operation referenced to clock rising edge
  • 4-bank operation controlled by BA0,BA1(Bank Address)
  • /CAS latency- 2/3 (programmable)
  • Burst length- 1/2/4/8/FP (programmable)
  • Burst type- Sequential and interleave burst (programmable)
  • Byte Control- DQML and DQMU (M2V28S40ATP)
  • Random column access
  • Auto precharge / All bank precharge controlled by A10
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