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M2V56S20TP - 256M Synchronous DRAM

General Description

M2V56S20TP is a 4-bank x 16777216-word x 4-bit, M2V56S30TP is a 4-bank x 8388608-word x 8-bit, M2V56S40TP is a 4-bank x 4194304-word x 16-bit, synchronous DRAM, with LVTTL interface.

All inputs and outputs are referenced to the rising edge of CLK.

Key Features

  • - Single 3.3v±0.3V power supply - Max. Clock frequency 100MHz(-7/-8), 133MHz (-6) - Fully Synchronous operation referenced to clock rising edge - Single Data Rate - 4 bank operation controlled by BA0, BA1 (Bank Address) - /CAS latency- 2/3 (programmable) - Burst length- 1/2/4/8/full page (programmable) - Burst type- sequential / interleave (programmable) - Random column access - Auto precharge / All bank precharge controlled by A10 - 8192 refresh cycles /64ms (4 banks concurrent refresh) - Auto.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SDRAM (Rev.1.1) Single Data Rate Feb.2000 MITSUBISHI LSIs M2V56S20/ 30/ 40/ TP -6, -7, -8 256M Synchronous DRAM Some of contents are subject to change without notice. DESCRIPTION M2V56S20TP is a 4-bank x 16777216-word x 4-bit, M2V56S30TP is a 4-bank x 8388608-word x 8-bit, M2V56S40TP is a 4-bank x 4194304-word x 16-bit, synchronous DRAM, with LVTTL interface. All inputs and outputs are referenced to the rising edge of CLK. The M2V56S20/30/40TP achieve very high speed data rate up to 100MHz (-7/-8) , 133MHz (-6), and are suitable for main memory or graphic memory in computer systems. FEATURES - Single 3.3v±0.3V power supply - Max.