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M54522FP - 8-UNIT 400mA DARLINGTON TRANSISTOR ARRAY

General Description

M54522P and M54522FP are eight-circuit Darlington transistor arrays with clamping diodes.

The circuits are made of NPN transistors.

Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply.

Key Features

  • High breakdown voltage (BVCEO ≥ 40V) High-current driving (Ic(max) = 400mA) With clamping diodes Driving available with PMOS IC output Wide operating temperature range (Ta =.
  • 20 to +75°C) Package type 18P4G(P) NC 1 20 NC.

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MITSUBISHI SEMICONDUCTOR M54522P/FP 8-UNIT 400mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54522P and M54522FP are eight-circuit Darlington transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply.