M54532P Datasheet | Mitsubishi Electric

MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54532P/FP 4-UNIT 1.5A DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54532P and M54532FP are four-circuit Darlington transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply. PIN CONFIGURATION MON 1 16 NC OUTPUT1 O1← 2 INPUT1 IN1→ 3 15 →O4 OUTPUT4 14 ←IN4 INPUT4 13  12   4 GND   5 INPUT2 IN2→ 6  GND 11 ←IN3 INPUT3 10 →O3 OUTPUT3 9 NC Features High breakdown voltage (BV CEO ≥ 50V) High-current driving (Ic(max) = 1.5A) With clamping diodes Wide operating temperature range (Ta = - 20 to +75°C) OUTPUT2 O2← 7 MON 8 16P4(P) Package type 16P2N-A(FP) NC : No connection APPLICATION Drives of relays and printers, digit drives of indication elements (LEDs and lamps), and power amplification CIRCUIT DIAGRAM OUTPUT INPUT 340 FUNCTION The M54532P and M54532FP each have four circuits consisting of NPN Darlington transistors. They have resistance of 340 Ω between input transistor bases and input pins. A clamping diode is provided between each output pin (collector) and pin. The output transistor emitters are all connected to the GND pin. The collector current is 1.5A maximum. Collector-emitter supply voltage is 50V maximum. The M54532FP is enclosed in a molded small flat package, enabling space-saving design. 5.5K 3K The four circuits share the and GND. The diode, indicated with the dotted line, is parasitic, and cannot be used. Unit :...