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M54577P - 7 UNIT 30MA TRANSISTOR ARRAY

Datasheet Summary

Description

M54577P is seven-circuit transistor arrays.

The circuits are made of NPN transistors.

The semiconductor integrated circuits perform high-current driving with extremely low inputcurrent supply.

Features

  • q Medium breakdown voltage (BV CEO ≥ 30V) q Output sink current (IC(max) = 30mA) q Driving available with MOS (PMOS, CMOS) IC output q Low output saturation voltage (VCE(sat) = 0.35V at IC = 20mA) q Wide operating temperature range (Ta =.
  • 20 to +75 °C) IN7→ 7 GND 8 VCC Package type 16P4(P).

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Datasheet Details

Part number M54577P
Manufacturer Mitsubishi
File Size 36.10 KB
Description 7 UNIT 30MA TRANSISTOR ARRAY
Datasheet download datasheet M54577P Datasheet
Additional preview pages of the M54577P datasheet.

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Full PDF Text Transcription

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MITSUBISHI SEMICONDUCTOR M54577P 7-UNIT 30mA TRANSISTOR ARRAY DESCRIPTION M54577P is seven-circuit transistor arrays. The circuits are made of NPN transistors. The semiconductor integrated circuits perform high-current driving with extremely low inputcurrent supply. PIN CONFIGURATION IN1→ 1 IN2→ 2 IN3→ 3 INPUT IN4→ 4 IN5→ 5 IN6→ 6 16 → O1 15 → O2 14 → O3 13 → O4 12 → O5 11 → O6 10 → O7 9 OUTPUT FEATURES q Medium breakdown voltage (BV CEO ≥ 30V) q Output sink current (IC(max) = 30mA) q Driving available with MOS (PMOS, CMOS) IC output q Low output saturation voltage (VCE(sat) = 0.
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