M54577P Datasheet | Mitsubishi Electric

MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> 7-UNIT 30m A TRANSISTOR ARRAY DESCRIPTION M54577P is seven-circuit transistor arrays. The circuits are made of NPN transistors. The semiconductor integrated circuits perform high-current driving with extremely low inputcurrent supply. PIN CONFIGURATION IN1→ 1 IN2→ 2 IN3→ 3 INPUT IN4→ 4 IN5→ 5 IN6→ 6 16 → O1 15 → O2 14 → O3 13 → O4 12 → O5 11 → O6 10 → O7 9 OUTPUT Features q Medium breakdown voltage (BV CEO ≥ 30V) q Output sink current (IC(max) = 30m A) q Driving available with MOS (PMOS, CMOS) IC output q Low output saturation voltage (VCE(sat) = 0.35V at IC = 20m A) q Wide operating temperature range (Ta = - 20 to +75 °C) IN7→ 7 GND Package type 16P4(P) CIRCUIT DIAGRAM APPLICATION Driving of digit drives of indication elements (LEDs and lamps) 10k VCC 23k INPUT OUTPUT 100k 22k GND FUNCTION The M54577P has seven circuits consisting of NPN transistor. This I C uses a predriver stage with a diode and 23kΩ resistor in series to input. The output transistor emitters are all connected to the GND pin (pin 8), and VCC is connected to pin 9. The collector current are capable of sinking 30m A maximum. Collector-emitter supply voltage is 30V maximum. Collector-emitter saturation voltage is below 0.35V (I C = 20m A) Drives active “H” input. The seven circuits share the VCC and GND. The diode, indicated with the dotted line, is parasitic, and cannot be used. Unit :...