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M5M27C128K - 128K-Bit CMOS Erasable and Electrically Reprogrammable ROM

Description

The Mits.ubishi M5M27C12BK is a high-speed 131072-bit ultraviolet erasable and electrically reprogram mabie read only memory_ It is suitable for microprocessor programming applications where rapid turn-around is required_ The M5M27C12BK is fabricated by N-channel double polysilicon Memory gate and C

Features

  • 163B4 word x B bit organization.
  • Access time M5M27C12BK-2 . . _ . . ___ 200ns (max. ) M5M27C12BK ______ . __ 250ns (max. ) M5M27C12BK-3 300ns (max. ).
  • Two line control OE, CE.
  • Low power current (Icc): Active 30mA (max. ) Standby 1mA (max. ).
  • Single 5V power supply.
  • 3-State output buffer.
  • Input and output TTL-compatible in read and program mode.
  • Standard 2B-pin D I L package.
  • Fast.

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Datasheet Details

Part number M5M27C128K
Manufacturer Mitsubishi
File Size 405.33 KB
Description 128K-Bit CMOS Erasable and Electrically Reprogrammable ROM
Datasheet download datasheet M5M27C128K Datasheet
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MITSUBISHI LSI. 'iF~;0,';;' ('1'" MSM27C128K, -2, -3 ,.;;~.'/;' 131 072-BIT( 16384-WORD BY 8-BIT) 'ERASABLE AND ELECTRICALLY REPROGRAMMABLE ROM DESCRIPTION The Mits.ubishi M5M27C12BK is a high-speed 131072-bit ultraviolet erasable and electrically reprogram mabie read only memory_ It is suitable for microprocessor programming applications where rapid turn-around is required_ The M5M27C12BK is fabricated by N-channel double polysilicon Memory gate and CMOS technology for peripheral circuits, and available in a 2B pin D I L package with a transparent lid_ FEATURES • 163B4 word x B bit organization • Access time M5M27C12BK-2 .. _ .. ___ 200ns (max.) M5M27C12BK ______ . __ 250ns (max.) M5M27C12BK-3 ........ 300ns (max.) • Two line control OE, CE • Low power current (Icc): Active .....
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