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M5M29FB800RV-10 Datasheet

Manufacturer: Mitsubishi Electric
M5M29FB800RV-10 datasheet preview

Datasheet Details

Part number M5M29FB800RV-10
Datasheet M5M29FB800RV-10_MitsubishiElectricSemiconductor.pdf
File Size 151.65 KB
Manufacturer Mitsubishi Electric
Description 8 /388 /608-BIT (1048 /576-576-WORD BY 8-BIT / 524 /288-WORD BY16-BIT)CMOS 3.3V-ONLY / BLOCK ERASE FLASH MEMORY
M5M29FB800RV-10 page 2 M5M29FB800RV-10 page 3

M5M29FB800RV-10 Overview

The MITSUBISHI M5M29FB/T800FP, VP, RV are 3.3V-only high speed 8,388,608-bit CMOS boot block Flash Memories suitable for mobile and personal puting, and munication products. The M5M29FB/T800FP, VP, RV are fabricated by CMOS technology for the peripheral circuits and DINOR(Divided bit line NOR) architecture for the memory cells, and are available in 44pin SOP or 48pin TSOP(I). CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY...

M5M29FB800RV-10 Key Features

  • 524,288 word x 16bit
  • 1,048,576 word x 8 bit
  • VCC = 3.3V±0.3V Supply voltage
  • 80/100/120ns (Max) Access time
  • 108 mW (Max.) Read
  • 144 mW (Max.) Program/Erase
  • 0.72 mW (Max.) Standby Deep power down mode
  • 3.3µW (typ.) Auto program
  • 7.5ms (typ.) Program Time
  • 128word Program Unit Auto Erase
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M5M29FB800RV-80 8 /388 /608-BIT (1048 /576-576-WORD BY 8-BIT / 524 /288-WORD BY16-BIT)CMOS 3.3V-ONLY / BLOCK ERASE FLASH MEMORY
M5M29FB800FP 8M-Bit BLOCK ERASE FLASH MEMORY
M5M29FB800FP-10 8M-Bit BLOCK ERASE FLASH MEMORY
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M5M29FB800RV-10 Distributor

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