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M5M29FB800RV-10 - 8 /388 /608-BIT (1048 /576-576-WORD BY 8-BIT / 524 /288-WORD BY16-BIT)CMOS 3.3V-ONLY / BLOCK ERASE FLASH MEMORY

Datasheet Summary

Description

The MITSUBISHI M5M29FB/T800FP, VP, RV are 3.3V-only high speed 8,388,608-bit CMOS boot block Flash Memories suitable for mobile and personal computing, and communication products.

Features

  • 524,288 word x 16bit 1,048,576 word x 8 bit VCC = 3.3V±0.3V Supply voltage 80/100/120ns (Max) Access time Organization Power Dissipation 108 mW (Max. ) Read 144 mW (Max. ) Program/Erase 0.72 mW (Max. ) Standby Deep power down mode 3.3µW (typ. ) Auto program 7.5ms (typ. ) Program Time 128word Program Unit Auto Erase 50 ms (typ. ) Erase time Erase Unit Boot Block 8Kword / 16Kbyte x 1 4Kword / 8Kbyte x 2 Parameter Block 16Kword / 32Kbyte x 1 Main Block 32Kword / 64Kbyte x 15 Program/Eras.

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Datasheet Details

Part number M5M29FB800RV-10
Manufacturer Mitsubishi
File Size 151.65 KB
Description 8 /388 /608-BIT (1048 /576-576-WORD BY 8-BIT / 524 /288-WORD BY16-BIT)CMOS 3.3V-ONLY / BLOCK ERASE FLASH MEMORY
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MITSUBISHI LSIs MITSUBISHI LSIs M5M29FB/T800FP,VP,RV-80,-10,-12 M5M29FB/T800FP,VP,RV-80,-10,-12 8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) 8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) DESCRIPTION The MITSUBISHI M5M29FB/T800FP, VP, RV are 3.3V-only high speed 8,388,608-bit CMOS boot block Flash Memories suitable for mobile and personal computing, and communication products. The M5M29FB/T800FP, VP, RV are fabricated by CMOS technology for the peripheral circuits and DINOR(Divided bit line NOR) architecture for the memory cells, and are available in 44pin SOP or 48pin TSOP(I). CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY FEATURES ................................. 524,288 word x 16bit ...............................
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