M5M29FB800VP Datasheet | Mitsubishi Electric

DESCRIPTION The MITSUBISHI M5M29FB/T800FP, VP, RV are 3.3V-only high speed 8,388,608-bit CMOS boot block Flash Memories suitable for mobile and personal puting, and munication products. The M5M29FB/T800FP, VP, RV are fabricated by CMOS technology for the peripheral circuits and DINOR(Divided bit line NOR) architecture for the memory cells, and are available in 44pin SOP or 48pin TSOP(I). CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY FEATURES 524,288 word x 16bit 1,048,576 word x 8 bit VCC = 3.3V±0.3V Supply voltage 80/100/120ns (Max) Access time Organization Power Dissipation 108 m W (Max.) Read 144 m W (Max.) Program/Erase 0.72 m W (Max.) Standby Deep power down mode 3.3µW (typ.) Auto program 7.5ms (typ.) Program Time 128word Program Unit Auto Erase 50 ms (typ.) Erase time Erase Unit Boot Block 8Kword / 16Kbyte x 1 4Kword / 8Kbyte x 2 Parameter Block 16Kword / 32Kbyte x 1 Main Block 32Kword / 64Kbyte x 15 Program/Erase cycles 100Kcycles Boot Block Bottom Boot M5M29FB800 Top Boot M5M29FT800 Other Functions Software mand Control Selective Block Lock Erase Suspend/Resume Program Suspend/Resume Status Register Read Sleep Package 48-Lead, 12mmx 20mm TSOP (type-I) 44-Lead SOP PIN CONFIGURATION (TOP VIEW) ADDRESS INPUTS CHIP ENABLE INPUT NC A18 A17 A7 A6 A5 A4 A3 A2 A1 A0 /CE GND /OE DQ0 DQ8 DQ1 DQ9 DQ2 DQ10 DQ3 DQ11 1 2 3 4 5 6 44 43 42 41 40 39 /RP RESET/ POWER DOWN INPUT 7 8 9...