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M5M29GB161BWG Datasheet

Manufacturer: Mitsubishi Electric

M5M29GB161BWG datasheet preview

Datasheet Details

Part number	M5M29GB161BWG
Datasheet	M5M29GB161BWG_MitsubishiElectricSemiconductor.pdf
File Size	200.63 KB
Manufacturer	Mitsubishi Electric
Description	16 /777 /216-BIT (1048 /576-WORD BY16-BIT) CMOS 3.3V-ONLY / BLOCK ERASE FLASH MEMORY

M5M29GB161BWG Overview

The MITSUBISHI Mobile FLASH M5M29GB/T161BWG are 3.3V-only high speed 16,777,216-bit CMOS boot block Flash Memories with alternating BGO (Back Ground Operation).

M5M29GB161BWG Key Features

1048,576 word x 16bit
Bottom Boot M5M29GT161BWG
Top Boot Other Functions Soft Ware mand Control Selective Block Lock Erase Suspend/Resume Program Suspend/Resume Status
6 x 8 balls, 0.75mm ball pitch
VCC = 2.7~3.6V Supply voltage
Access time
90ns (Max.)
54 mW (Max. at 5MHz) Read (After Automatic Power saving)
0.33µW (typ.)
126 mW (Max.) Program/Erase

More Datasheets from Mitsubishi Electric

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Part Number	Description
M5M29GB160BVP	16 /777 /216-BIT (2097 /152-WORD BY 8-BIT / 1048 /576-WORD BY16-BIT)CMOS 3.3V-ONLY / BLOCK ERASE FLASH MEMORY
M5M29GB160BVP-80	16 /777 /216-BIT (2097 /152-WORD BY 8-BIT / 1048 /576-WORD BY16-BIT)CMOS 3.3V-ONLY / BLOCK ERASE FLASH MEMORY
M5M29GB	16 /777 /216-BIT (1048 /576-WORD BY16-BIT) CMOS 3.3V-ONLY / BLOCK ERASE FLASH MEMORY
M5M29GT160BVP	16 /777 /216-BIT (2097 /152-WORD BY 8-BIT / 1048 /576-WORD BY16-BIT)CMOS 3.3V-ONLY / BLOCK ERASE FLASH MEMORY
M5M29GT160BVP-80	16 /777 /216-BIT (2097 /152-WORD BY 8-BIT / 1048 /576-WORD BY16-BIT)CMOS 3.3V-ONLY / BLOCK ERASE FLASH MEMORY
M5M29GT161BWG	16 /777 /216-BIT (1048 /576-WORD BY16-BIT) CMOS 3.3V-ONLY / BLOCK ERASE FLASH MEMORY
M5M29F25611VP	MORE THAN 16 /057 SECTORS (271 /299 /072 BITS) CMOS 3.3V-ONLY SERIAL READ FLASH MEMORY
M5M29FB800FP	8M-Bit BLOCK ERASE FLASH MEMORY
M5M29FB800FP-10	8M-Bit BLOCK ERASE FLASH MEMORY
M5M29FB800FP-12	8M-Bit BLOCK ERASE FLASH MEMORY

M5M29GB161BWG Distributor