M5M417400CJ-7S Datasheet | Mitsubishi Electric

DESCRIPTION This is a family of 4194304-word by 4-bit dynamic RAMS, fabricated with the high performance CMOS process, and is ideal for large-capacity memory systems where high speed, low power dissipation, and low costs are essential. The use of double-layer metal process bined with twin-well CMOS technology and a single-transistor dynamic storage stacked capacitor cell provide high circuit density at reduced costs. Multiplexed address inputs permit both a reduction in pins and an increase in system densities. FEATURES Type Name M5M417400CXX-5,-5S M5M417400CXX-6,-6S M5M417400CXX-7,-7S RAS access time (max.ns) CAS access time (max.ns) Address access time (max.ns) OE access time (max.ns) C ycle time (min.ns) Power dissipa- tion (typ.m W) XX=J, TP - Standard 26 pin SOJ, 26 pin TSOP - Single 5V ±...