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M5M4257S-12 - 256K-Bit DRAM

General Description

This is a family of 262 l44-word by l-bit dynamic RAMs, fabricated with the high performance N-channel silicon gate MOS process, and is ideal for large-capacity memory systems where high speed, low power dissipation, and low costs are essential.

Key Features

  • Type name Access time (max) (ns) Cycle time (min) (ns) Power dissipation (typ) (mW) M5M4257S-12 120 230 260 M5M4257S-15 1.

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📁 Similar Datasheet

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Other Datasheets by Mitsubishi Electric

Part Number Description
M5M4257S-15 256K-Bit DRAM
M5M4257S-20 256K-Bit DRAM
M5M4257L-12 256K-Bit DRAM
M5M4257L-15 256K-Bit DRAM
M5M4257L-20 256K-Bit DRAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MITSUBISHI LSls MSM42S7S·12, -15, -20 262 i44-BIT (262 i44-WORD BY i-BIT) DYNAMIC RAM DESCRIPTION This is a family of 262 l44-word by l-bit dynamic RAMs, fabricated with the high performance N-channel silicon gate MOS process, and is ideal for large-capacity memory systems where high speed, low power dissipation, and low costs are essential. The use of double-layer polysilicon process combined with silicide technology and a singletransistor dynamic storage cell provide high circuit density at reduced costs, and the use of dynamic circuitry including sense amplifiers assures low power dissipation. Multiplexed address inputs permit both a reduction in pins to the standard l6-pin package configuration and an increase in system densities.