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M5M44265CJ-7 - EDO 4M-Bit DRAM

Download the M5M44265CJ-7 datasheet PDF. This datasheet also covers the M5M44265CJ-5 variant, as both devices belong to the same edo 4m-bit dram family and are provided as variant models within a single manufacturer datasheet.

General Description

This is a family of 262144-word by 16-bit dynamic RAMs with Hyper Page mode fuction, fabricated with the high performance CMOS process, and is ideal for the buffer memory systems of personal computer graphics and HDD where high speed, low power dissipation, and low costs are essential.

Key Features

  • Type name M5M44265CXX-5,-5S M5M44265CXX-6.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (M5M44265CJ-5-Mitsubishi.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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M5M44258BP 1M-Bit DRAM Mitsubishi Electric

Other Datasheets by Mitsubishi Electric

Part Number Description
M5M44265CJ-7S EDO 4M-Bit DRAM
M5M44265CJ-5 EDO 4M-Bit DRAM
M5M44265CJ-5S EDO 4M-Bit DRAM
M5M44265CJ-6 EDO 4M-Bit DRAM
M5M44265CJ-6S EDO 4M-Bit DRAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MIMTSITUSBUIBSIHSIHLISLISsIs MM55MM444422656C5J,CTPJ-5,T,-6P,-7-,5-5,S-6,-6,S-7,-7,S -5S,-6S,-7S EDOED(HOY(PHEYRPEPRAGPAEGMEOMDOE)D4E1)9441390443-B04IT-B(I2T62(2164241-W44O-WRODRBDYB1Y6-B16IT-B) IDTY) NDAYMNAICMRICAMRAM DESCRIPTION This is a family of 262144-word by 16-bit dynamic RAMs with Hyper Page mode fuction, fabricated with the high performance CMOS process, and is ideal for the buffer memory systems of personal computer graphics and HDD where high speed, low power dissipation, and low costs are essential. The use of double-layer metalization process technology and a single-transistor dynamic storage stacked capacitor cell provide high circuit density at reduced costs. Multiplexed address inputs permit both a reduction in pins and an increase in system densities.