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M5M44405CJ-6S - EDO 4M-Bit DRAM

Download the M5M44405CJ-6S datasheet PDF. This datasheet also covers the M5M44405CJ-5 variant, as both devices belong to the same edo 4m-bit dram family and are provided as variant models within a single manufacturer datasheet.

Description

This is a family of 1048576-word by 4-bit dynamic RAMs, fabricated with the high performance CMOS process,and is ideal for largecapacity memory systems where high speed, low power dissipation, and low costs are essential.

Features

  • Type name RAS access time (max. ns) CAS access time (max. ns) Address a.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (M5M44405CJ-5-Mitsubishi.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by Mitsubishi Electric

Part Number Description
M5M44405CJ-6 EDO 4M-Bit DRAM
M5M44405CJ-5 EDO 4M-Bit DRAM
M5M44405CJ-5S EDO 4M-Bit DRAM
M5M44405CJ-7 EDO 4M-Bit DRAM
M5M44405CJ-7S EDO 4M-Bit DRAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MITMSIUTSBUISBHISI LHSI ILsSIs M5M44405CJM,T5MP4-4540,-56C,J-,T7P,--55,-S6,,-7-,6-5SS,,--67SS,-7S EDOED(OHY( PHEYRPEPRAGPAEGMEOMDOED) E41)9441390443-0B4IT-B(IT10(4180547865-7W6O-WRODRBDYB4Y-B4IT-B)ITDY) NDAYNMAICMRICARMAM DESCRIPTION This is a family of 1048576-word by 4-bit dynamic RAMs, fabricated with the high performance CMOS process,and is ideal for largecapacity memory systems where high speed, low power dissipation, and low costs are essential. The use of quadruple-layer polysilicon process combined with silicide technology and a single-transistor dynamic storage stacked capacitor cell provide high circuit density at reduced costs. Multiplexed address inputs permit both a reduction in pins and an increase in system densities.
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