M5M44405CJ Overview
This is a family of 1048576-word by 4-bit dynamic RAMs, fabricated with the high performance CMOS process,and is ideal for largecapacity memory systems where high speed, low power dissipation, and low costs are essential. The use of quadruple-layer polysilicon process bined with silicide technology and a single-transistor dynamic storage stacked capacitor cell provide high circuit density at reduced costs....
M5M44405CJ Key Features
- Self refresh current 120µA(max) Extended refresh capability
- 4-bit parallel test mode capability
- Applicable to self refresh version (M5M44405CJ,TP-5S,-6S,-7S : option) only