M5M44405CJ
Description
This is a family of 1048576-word by 4-bit dynamic RAMs, fabricated with the high performance CMOS process,and is ideal for largecapacity memory systems where high speed, low power dissipation, and low costs are essential. The use of quadruple-layer polysilicon process bined with silicide technology and a single-transistor dynamic storage stacked capacitor cell provide high circuit density at reduced costs.
