Datasheet4U Logo Datasheet4U.com

M5M4464P-15 - 256K-Bit DRAM

Download the M5M4464P-15 datasheet PDF. This datasheet also covers the M5M4464P-12 variant, as both devices belong to the same 256k-bit dram family and are provided as variant models within a single manufacturer datasheet.

Description

This is family of 65536-word by 4-bit dynamic RAMs, fabricated with the high performance N-channel silicon-gate MOS process, and is ideal for large-ca-pacity memory systems where high speed, low power dissipation, and low costs are essential.

Features

  • Performance ranges Type name M5M4464P-12 M5M4464P-15 Access time (max) (ns) 120 150 Cycle time (min) Ins I 220 260 Power dissipation "ypl ImWI 260 230.
  • 65536 x 4 Organization.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (M5M4464P-12-Mitsubishi.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MITSUBISHI LSls MsM4464P-12, -15 262 144-BIT(65 536-WORD BY 4-BIT) DYNAMIC RAM DESCRIPTION This is family of 65536-word by 4-bit dynamic RAMs, fabricated with the high performance N-channel silicon-gate MOS process, and is ideal for large-ca-pacity memory systems where high speed, low power dissipation, and low costs are essential. The use of double-layer polysilicon process technology and a single-transistor dynamic storage cell provide high circuit density at reduced costs, and the use of dynamic circuitry including sense amplifiers assures low power dissipation. Multiplexed address inputs permit both a reduction in pins to the standard l8-pin package configuration and an increase in system densities. The M5M4464P operates on a 5V power supply using the on-chip substrate bias generator.
Published: |