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M5M44800CJ-6 - FAST PAGE MODE 4M-Bit DRAM

Download the M5M44800CJ-6 datasheet PDF. This datasheet also covers the M5M44800CJ-5 variant, as both devices belong to the same fast page mode 4m-bit dram family and are provided as variant models within a single manufacturer datasheet.

Description

This is a family of 524288-word by 8-bit dynamic RAMs, fabricated with the high performance CMOS process, and is ideal for largecapacity memory systems where high speed, low power dissipation, and low costs are essential.

Features

  • Type name RAS CAS Address OE access access access access time time time time Cycle time Power dissipa- tion (max. ns) (max. ns) (max. ns) (max. ns) (min. ns) (typ. mW) M5M44800CXX-5,-5S 50 13 25 13 90 450 M.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (M5M44800CJ-5-Mitsubishi.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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M5M44258BJ 1M-Bit DRAM Mitsubishi Electric
M5M44258BL 1M-Bit DRAM Mitsubishi Electric

Other Datasheets by Mitsubishi Electric

Part Number Description
M5M44800CJ-6S FAST PAGE MODE 4M-Bit DRAM
M5M44800CJ-5 FAST PAGE MODE 4M-Bit DRAM
M5M44800CJ-5S FAST PAGE MODE 4M-Bit DRAM
M5M44800CJ-7 FAST PAGE MODE 4M-Bit DRAM
M5M44800CJ-7S FAST PAGE MODE 4M-Bit DRAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MITMSIUTBSIUSBHIISHLSI ILsSIs M5MM5M444488000C0JC,TPJ-,5T,-6P,--75,-5,-S6,-,6-S7,-,7S -5S,-6S,-7S FAFSATSPTAPGAEGMEOMDOED4E19441390443-0B4I-TB(I5T2(45228482-8W8-OWRODRBDYB8Y-B8I-TB)IDT)YDNYANMAICMIRCARMAM DESCRIPTION This is a family of 524288-word by 8-bit dynamic RAMs, fabricated with the high performance CMOS process, and is ideal for largecapacity memory systems where high speed, low power dissipation, and low costs are essential. The use of double-layer metalization process technology and a single-transistor dynamic storage stacked capacitor cell provide high circuit density at reduced costs. Multiplexed address inputs permit both a reduction in pins and an increase in system densities. Self or extended refresh current is low enough for battery back-up application.
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