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M5M465400BJ-5 - FAST PAGE MODE DYNAMIC RAM

Download the M5M465400BJ-5 datasheet PDF. This datasheet also covers the M5M465400BJ variant, as both devices belong to the same fast page mode dynamic ram family and are provided as variant models within a single manufacturer datasheet.

Description

The M5M467400/465400BJ,BTP is organized 16777216-word by 4-bit, M5M467800/465800BJ,BTP is organized 8388608-word by 8-bit, and M5M465160BJ,BTP is organized 4194304-word by 16-bit dynamic RAMs, fabricated with the high performance CMOS process, and are suitable for large-capacity memory systems with

Features

  • Type name RAS CAS Address OE Cycle access acces.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (M5M465400BJ_MitsubishiElectricSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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M5M417805CJ Hyper Page Mode 16M-Bit DRAM Mitsubishi Electric
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Other Datasheets by Mitsubishi Electric

Part Number Description
M5M465400BJ-5S FAST PAGE MODE DYNAMIC RAM
M5M465400BJ-6 FAST PAGE MODE DYNAMIC RAM
M5M465400BJ-6S FAST PAGE MODE DYNAMIC RAM
M5M465400BJ FAST PAGE MODE 67108864-BIT (16777216-WORD BY 4-BIT) DYNAMIC RAM
M5M465400BTP-5 FAST PAGE MODE 67108864-BIT (16777216-WORD BY 4-BIT) DYNAMIC RAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
(Rev. 1.1) MITSUBISHI LSIs M5M467400/465400BJ,BTP -5,-6,-5S,-6S M5M467800/465800BJ,BTP -5,-6,-5S,-6S M5M465160BJ,BTP -5,-6,-5S,-6S FAST PAGE MODE 67108864-BIT (16777216-WORD BY 4-BIT) DYNAMIC RAM FAST PAGE MODE 67108864-BIT (8388608-WORD BY 8-BIT) DYNAMIC RAM FAST PAGE MODE 67108864-BIT (4194304-WORD BY 16-BIT) DYNAMIC RAM DESCRIPTION The M5M467400/465400BJ,BTP is organized 16777216-word by 4-bit, M5M467800/465800BJ,BTP is organized 8388608-word by 8-bit, and M5M465160BJ,BTP is organized 4194304-word by 16-bit dynamic RAMs, fabricated with the high performance CMOS process, and are suitable for large-capacity memory systems with high speed and low power dissipation.
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