M5M467800BJ Overview
The use of double-layer aluminum process bined with CMOS technology and a single-transistor dynamic storage stacked capacitor cell provide high circuit density. Multiplexed address inputs permit both a reduction in pins and an increase in system densities.
M5M467800BJ Key Features
- Applicable to self refresh version(M5M467400/465400/467800/465800/465160BJ,BTP-5S,-6S:option) only