• Part: M5M4V64S30ATP-12
  • Description: 64M (4-BANK x 2097152-WORD x 8-BIT) Synchronous DRAM
  • Manufacturer: Mitsubishi Electric
  • Size: 1.07 MB
M5M4V64S30ATP-12 Datasheet (PDF) Download
Mitsubishi Electric
M5M4V64S30ATP-12

Description

The M5M4V64S30ATP is a 4-bank x 2097152-word x 8-bit Synchronous DRAM, with LVTTL interface.

Key Features

  • Clock Enable: CKE controls internal clock
  • When CKE is low, internal clock for the following cycle is ceased
  • CKE is also used to select auto / self refresh
  • After self refresh mode is started, CKE bees asynchronous input
  • Self refresh is maintained as long as CKE is low
  • /CS /RAS, /CAS, /WE Input Input Chip Select: When /CS is high, any mand means No Operation
  • bination of /RAS, /CAS, /WE defines basic mands
  • A0-11 specify the Row / Column Address in conjunction with BA0,1
  • The Row Address is specified by A0-11
  • A10 is also used to indicate precharge option