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M5M51008BKR-70VL - 1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

This page provides the datasheet information for the M5M51008BKR-70VL, a member of the M5M 1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM family.

Datasheet Summary

Description

The M5M51008BFP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance triple polysilicon CMOS technology.

The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM.

Features

  • Type name M5M51008BFP,VP,RV,KV,KR-70VL M5M51008BFP,VP,RV,KV,KR-10VL M5M51008BFP,VP,RV,KV,KR-12VL M5M51008BFP,VP,RV,KV,KR-15VL M5M51008BFP,VP,RV,KV,KR-70VLL M5M51008BFP,VP,RV,KV,KR-10VLL M5M51008BFP,VP,RV,KV,KR-12VLL M5M51008BFP,VP,RV,KV,KR-15VLL Access time (max) Power supply current VCC Active stand-by (1MHz) (max) (max) DATA INPUTS/.

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Datasheet Details

Part number M5M51008BKR-70VL
Manufacturer Mitsubishi
File Size 61.79 KB
Description 1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM
Datasheet download datasheet M5M51008BKR-70VL Datasheet
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Full PDF Text Transcription

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1997-1/21 MITSUBISHI LSIs M5M51008BFP,VP,RV,KV,KR -70VL,-10VL,-12VL,-15VL, -70VLL,-10VLL,-12VLL,-15VLL 1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION The M5M51008BFP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM. They are low standby current and low operation current and ideal for the battery back-up application. The M5M51008BVP,RV,KV,KR are packaged in a 32-pin thin small outline package which is a high reliability and high density surface mount device(SMD).Two types of devices are available.
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