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M5M51008CKR-55X - 1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

Description

The M5M51008CP,FP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology.

Features

  • Type name M5M51008CP,FP,VP,RV,KV,KR-55H M5M51008CP,FP,VP,RV,KV,KR-70H M5M51008CP,FP,VP,RV,KV,KR-55X M5M51008CP,FP,VP,RV,KV,KR-70X Access time (max) Power supply current Active (1MHz) (max) stand-by (max) DATA INPUTS/.

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Other Datasheets by Mitsubishi Electric

Part Number Description
M5M51008CKR-55H 1M-Bit CMOS STATIC RAM
M5M51008CKR-70H 1M-Bit CMOS STATIC RAM
M5M51008CKR-70X 1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM
M5M51008CKV 1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM
M5M51008CKV-55H 1M-Bit CMOS STATIC RAM

Full PDF Text Transcription

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MITSUBISHI LSIs M5M51008CP,FP,VP,RV,KV,KR -55H, -70H, -55X, -70X 1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION The M5M51008CP,FP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high density and low power static RAM. They are low standby current and low operation current and ideal for the battery back-up application. The M5M51008CVP,RV,KV,KR are packaged in a 32-pin thin small outline package which is a high reliability and high density surface mount device(SMD). Two types of devices are available.
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