Datasheet4U Logo Datasheet4U.com

M5M51008DVP-70H - 1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

Download the M5M51008DVP-70H datasheet PDF. This datasheet also covers the M5M variant, as both devices belong to the same 1048576-bit(131072-word by 8-bit)cmos static ram family and are provided as variant models within a single manufacturer datasheet.

General Description

The M5M51008DP,FP,VP,RV,KV are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology.

Key Features

  • Type name M5M51008DFP,VP,RV,KV-55H M5M51008DFP,VP,RV,KV-70H Access time (max) Power supply current Active (1MHz) (max) stand-by (max) DATA INPUTS/.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (M5M-51008D.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
M5M51008FP CMOS Static RAM Mitsubishi Electric
M5M51008P 1M-Bit CMOS Static RAM Mitsubishi Electric
M5M5117FP 16K-Bit CMOS Static RAM Mitsubishi Electric
M5M5256BP 256K-Bit CMOS Sraric RAM Mitsubishi Electric
M5M5256DKP 262144-Bit CMOS Static RAM Mitsubishi Electric

Other Datasheets by Mitsubishi Electric

Part Number Description
M5M51008DVP-55H 1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM
M5M51008DVP 1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM
M5M51008DFP 1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM
M5M51008DFP-55H 1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM
M5M51008DFP-70H 1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Ver. 1.1 MITSUBISHI LSIs M5M51008DFP,VP,RV,KV,KR -55H, -70H 1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION The M5M51008DP,FP,VP,RV,KV are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high density and low power static RAM. They are low standby current and low operation current and ideal for the battery back-up application. The M5M51008DVP,RV,KV are packaged in a 32-pin thin small outline package which is a high reliability and high density surface mount device(SMD). Two types of devices are available.