M5M51016BRT-12VL-I Datasheet | Mitsubishi Electric

9 9 Jul Jul,1997 ,1997 M5M51016BTP,RT-12VL-I, M5M51016BTP,RT-12VL-I, -12VLL-I -12VLL-I 1048576-BIT(65536-WORD 1048576-BIT(65536-WORD BY BY 16-BIT)CMOS 16-BIT)CMOS STATIC STATIC RAM RAM DESCRIPTION The M5M51016BTP, RT are a 1048576-bit CMOS static RAM organized as 65536 word by 16-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM. They are low stand-by current and low operation current and ideal for the battery back-up application. The M5M51016BTP,RT are packaged in a 44-pin thin small outline package which is a high reliability and high density...